[1]董国波,张铭,董培明,等.CuLaO2薄膜的制备和光电性能研究[J].郑州大学学报(工学版),2008,29(04):10-13.[doi:10.3969/j.issn.1671-6833.2008.04.003]
DONG Guobo,ZHANG Ming,DONG Peiming,et al.Preparation and photoelectric properties of CuLaO2 films[J].Journal of Zhengzhou University (Engineering Science),2008,29(04):10-13.[doi:10.3969/j.issn.1671-6833.2008.04.003]
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CuLaO2薄膜的制备和光电性能研究(
)
《郑州大学学报(工学版)》[ISSN:1671-6833/CN:41-1339/T]
- 卷:
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29
- 期数:
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2008年04期
- 页码:
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10-13
- 栏目:
-
- 出版日期:
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1900-01-01
文章信息/Info
- Title:
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Preparation and photoelectric properties of CuLaO2 films
- 作者:
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董国波; 张铭; 董培明; 等.
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北京工业大学材料科学与工程学院,北京,100124, 北京工业大学材料科学与工程学院,北京,100124, 北京工业大学材料科学与工程学院,北京,100124, 北京工业大学材料科学与工程学院,北京,100124, 北京工业大学材料科学与工程学院,北京,100124
- Author(s):
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DONG Guobo; ZHANG Ming; DONG Peiming; etc
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-
- 关键词:
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CuLaO2; 磁控溅射; 光致发光
- Keywords:
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- DOI:
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10.3969/j.issn.1671-6833.2008.04.003
- 文献标志码:
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A
- 摘要:
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采用传统的固相烧结法制备出纯相CuLaO2粉末,以此为靶材,首次采用射频磁控溅射法制备CuLaO2 薄膜并进行退火研究,得到了具有少量杂相的CuLaO2薄膜.其透过率在红外光区较高,近70%,可见光范Itt相时较低.CuLaO2 薄膜的电导率约6.7×10-4S/cm.对比分析了CuLaO2粉末及薄膜室温光致发光性能.测试结果表明,粉末和薄膜在450 am-650 am范围都有明显的发光带,而薄膜有少量的杂峰,杂峰是由于La203、Cu的氧化物及石英衬底的影响.
- Abstract:
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Pure phase CuLaO2 powder was prepared by traditional solid phase sintering method, and CuLaO2 film was prepared by RF magnetron sputtering method for the first time and annealed, and CuLaO2 film with a small amount of heterophase was obtained. Its transmittance is higher in the infrared light region, nearly 70%, and the visible light is lower in the Itt phase.The conductivity of CuLaO2 film is about 6.7×10-4S/cm.The photoluminescence performance of CuLaO2 powder and film at room temperature was compared and analyzed.The test results show that the powder and film have obvious luminescent bands in the range of 450 am-650 am, while the film has a small amount of heteropeaks, which are due to the influence of La203, Cu oxide and quartz substrate.
更新日期/Last Update:
1900-01-01