[1]孙佳庆,李红涛,郭春文,等.沉积条件对CVD-SiC涂层组织形貌和抗氧化性能的影响[J].郑州大学学报(工学版),2021,42(06):75-80.[doi:10.13705/j.issn.1671-6833.2021.04.025]
　Sun Jiaqing,Li Jiangtao,Guo Chun,et al.Effects of Deposition Conditions on Morphology and Oxidation Resistance of CVD-SiC Coatings[J].Journal of Zhengzhou University (Engineering Science),2021,42(06):75-80.[doi:10.13705/j.issn.1671-6833.2021.04.025]
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沉积条件对CVD-SiC涂层组织形貌和抗氧化性能的影响()
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《郑州大学学报(工学版)》[ISSN:1671-6833/CN:41-1339/T]

卷:
42
期数:
2021年06期
页码:
75-80
栏目:
出版日期:
2021-11-10

文章信息/Info

Title:
Effects of Deposition Conditions on Morphology and Oxidation Resistance of CVD-SiC Coatings
作者:
孙佳庆; 李红涛; 郭春文; 范宇恒; 张东生; 赵红亮
郑州大学材料科学与工程学院;巩义市泛锐熠辉复合材料有限公司;
Author(s):
1.School of Materials Science and Engineering, Zhengzhou University, Zhengzhou 450001, China; 2.Gongyi Van Yihui Composites Material Co., Ltd.
关键词:
Keywords:
CVD;  SiC coating;  substrate position;  deposition pressure;  morphology;  oxidation resistance
DOI:
10.13705/j.issn.1671-6833.2021.04.025
文献标志码:
A
摘要:
采用化学气相沉积法在高纯石墨基体表面制备了碳化硅（SiC）涂层，研究了基体位置和沉积压力对涂层组织形貌和抗氧化性能的影响。在基体位置的影响方面，随着基体与布气盘的距离增大，晶粒<111>生长方向的择优性先增强而后减弱，其晶粒的砂砾状生长特征也呈现先增强后减弱的变化规律；当基体与布气盘的距离较小时涂层易出现气孔，随着距离增大气孔逐渐消失，涂层抗氧化性能升高，而随着距离的进一步增大开始出现分界现象，造成涂层抗氧化性能再次下降。在沉积压力的影响方面，随着沉积压力增大，晶粒<111>生长方向的择优性被弱化，晶粒的砂砾状特征也随之减弱；沉积压力为2 kPa时，涂层无明显缺陷，涂层抗氧化性能较为优异，而当沉积压力增大到5 kPa和20 kPa时，涂层分别出现了分界和分层缺陷，导致涂层抗氧化性能下降。
Abstract:
Silicon carbide (SiC) coatings were prepared on the surface of high-purity graphite substrates by chemical vapor deposition, and the effects of deposition pressure and substrate position on the morphologies and oxidation resistance of the coatings were studied. The results showed that as the distances between the substrates at first and the air distribution plate increased, the preference of the <111> growth direction of the grains strengthened and then weakened, and the gravel-like growth characteristics of the grains also showed a law of change of strengthening first and then weakening. When the distances between the substrates and the air distribution plate were relatively close, the coatings were prone to pores. As the distances increased, the pores gradually disappeared, and the oxidation resistance of the coatings increased. With the further increase of the distances, the phenomenon of demarcation began to appear, causing the oxidation resistance of the coatings to decrease. Due to the preference of the <111> growth direction of the grains was weakened with the increase of deposition pressure, the gravel-like growth characteristics of the grains were also weakened. When the deposition pressure was 2 kPa, the coating had no obvious defects, the coating had excellent oxidation resistance, and when the deposition pressure increased to 5 kPa and 20 kPa, the coatings had defects of demarcation and delamination, respectively, resulting in a decrease in the oxidation resistance of the coatings. It was concluded that when the substrate position was 450 mm and the deposition pressure was 2 kPa, a SiC coating with dense structure, better combination with the substrate and excellent oxidation resistance could be prepared.

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更新日期/Last Update: 2021-12-17